时间：2021年5月28日（周五）下午15:00-16:30

Time：28 May, Friday, 2021, 3:00-4:30 PM

地点：西湖大学云栖校区2号楼315室

Venue: Room 315, 3F, Building 2, Yunqi Campus

线上：ZOOM 直播（会议号：893 6469 5555；密码：937081）

Online: ZOOM webinar (Meeting ID: 893 6469 5555；Passcode：937081)

主持人：西湖大学工学院PI 邱枫

Host: Dr. Feng Qiu, PI of School of Engineering, Westlake University

Link：https://us02web.zoom.us/j/89364695555?pwd=K2JuallsdFo0TVBiZFJMaGFuQjJQdz09

主讲嘉宾/Speaker：

王冬教授，日本九州大学综合理工学府

Prof. Dong Wang, Interdisciplinary Graduate School of Engineering Sciences, Kyushu University, Japan

主讲人简介/Biography:

Dr. Wang received his Bachelor degree of Physics in 1995 and PhD degree of Optics in 2000, from College of Physics, Jilin University, China. As a visiting researcher, he spent half a year at INFM, Scuola Normale Superiore, Italy in 2000. In 2008, he became a Research Associate Professor in Art, Science and Technology Center for Cooperative Research, Kyushu University. In 2012, he became an Associate Professor of CAMPUS-Asia EEST program. In 2016, he was promoted as a Professor of Interdisciplinary Graduate School of Engineering Sciences (IGSES), Kyushu University.

His current research interest is functional electrical materials and devices, especially aiming at high-performance and low-power-consumption technologies for energy saving in a smart society. He is an experienced researcher in the field of Group IV semiconductors, such like strained Si, SiGe-on-insulator, and Ge. He is an expert of electrical and optical characterizations for semiconductor thin films and devices, in particular, by using Deep Level Transient Spectroscopy and Micro-Photoluminescence. Currently he is focusing on development of Ge-optoelectronics and Ge-CMOS related technologies, including interface engineering, metal/Ge contact, strain application, Ge-on-insulator, and electrical & optical characterizations.

讲座摘要/Abstract:

With the rapid progress in CMOS scaling, Si transistors has been approaching physical limitation. Ge is a promising candidate to substitute Si for fabricating high-performance and low power-consumption semiconductor devices owing to its high carrier mobility and good compatibility to Si platform. However, some fundamental problems must be resolved to realize a functional Ge transistor, such as poor interface-quality of Ge-MOS and fermi-level pinning at metal/Ge contacts. In this talk, fundamental fabrication technologies developed by the author’s group will be introduced. Based on these technologies, Ge-MOSFETs has been fabricated with channel mobilities superior to Si. Metal-source/drain Ge MOSFETs and Ge LEDs/photodetectors were also demonstrated with a CMOS-compatible fabrication process.

讲座联系人/Contact：

工学院办公室

戴老师 daixueping@westlake.edu.cn